Design and Characterization of a 130 nm CMOS Ultra-Wideband Low-Noise Amplifier

Aleksandar Pajkanovic, Mirjana Videnovic-Misic, Goran M. Stojanovic


The design of an ultra-wideband low noise amplifier is presented in this paper. Schematic level design is described, as well as integrated circuit layout techniques applied and post-layout simulation results. After fabrication using the standard 130 nm CMOS process node, on-chip characterization has been performed. The simulation and characterization results are presented, analyzed and discussed in detail.


CMOS integrated circuits (IC), analog/radio-frequency (RF), ultra-wideband (UWB), low-noise amplifier (LNA), on-chip characterization

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