Advanced gate control system for power MOSFET switching losses reduction with complete switching sequence control

Rok Vrtovec, Janez Trontelj


To meet strict EMC requirements for power electronics applications driving an inductive load, it is often necessary to mitigate current and voltage transition slopes. Using the conventional MOSFET control method, slope mitigation is commonly performed by modifying a series gate resistance, which results in high switching losses, long turn-on and turn-off delays and long final gate charging and discharging durations affecting the overall application efficiency. In order to improve this, a novel MOSFET control method is developed and presented in this paper. It enables a complete control over all intervals of the switching sequences utilizing the gate current shaping principle. Switching losses, delays and final gate charging and discharging durations can be kept as low as possible, as the method allows to mitigate only the critical transition. The design of the system allows its implementation in a broad spectrum of applications regardless of the current or voltage rating and with a minimal impact on the application design. The paper first presents the inductive load switching background, followed by the detailed description of the presented system operation and its realization as an integrated circuit. At the end, efficiency measurements of the conventional and the advanced gate control methods are reported, showing significant advantages of the proposed system.


Power MOSFET switching behavior; advanced gate control; gate current shaping; switching losses reduction; EMC in power electronics

Full Text:



X. Wang, Y. Sun, T. Li, and J. Shi, “Active closed-loop gate voltage control method to mitigate metal-oxide semiconductor field-effect transistor turn-off voltage overshoot and ring,” IET Power Electron., vol. 6, no. 8, pp. 1715–1722, Sep. 2013.

B. Wittig and F. W. Fuchs, “Analysis and Comparison of Turn-off Active Gate Control Methods for Low-Voltage Power MOSFETs With High Current Ratings,” IEEE Trans. Power Electron., vol. 27, no. 3, pp. 1632–1640, Mar. 2012.

M. Rose, J. Krupar, and H. Hauswald, “Adaptive dv/dt and di/dt control for isolated gate power devices,” in 2010 IEEE Energy Conversion Congress and Exposition (ECCE), 2010, pp. 927–934.

J. E. Makaran, “Gate Charge Control for MOSFET Turn-Off in PWM Motor Drives Through Empirical Means,” IEEE Trans. Power Electron., vol. 25, no. 5, pp. 1339–1350, May 2010.

N. Idir, R. Bausiere, and J. J. Franchaud, “Active gate voltage control of turn-on di/dt and turn-off dv/dt in insulated gate transistors,” IEEE Trans. Power Electron., vol. 21, no. 4, pp. 849–855, Jul. 2006.

S. Park and T. M. Jahns, “Flexible dv/dt and di/dt control method for insulated gate power switches,” IEEE Trans. Ind. Appl., vol. 39, no. 3, pp. 657–664, May 2003.

H. P. Yee, “An EMI suppression MOSFET driver,” in Applied Power Electronics Conference and Exposition, 1997. APEC ’97 Conference Proceedings 1997., Twelfth Annual, 1997, vol. 1, pp. 242–248 vol.1.

H.-G. Lee, Y.-H. Lee, B.-S. Suh, and D. Hyun, “An improved gate control scheme for snubberless operation of high power IGBTs,” in , Conference Record of the 1997 IEEE Industry Applications Conference, 1997. Thirty-Second IAS Annual Meeting, IAS ’97, 1997, vol. 2, pp. 975–982 vol.2.

S. Musumeci, A. Raciti, A. Testa, A. Galluzzo, and M. Melito, “Switching-behavior improvement of insulated gate-controlled devices,” IEEE Trans. Power Electron., vol. 12, no. 4, pp. 645–653, Jul. 1997.

B. J. Baliga, Power semiconductor devices. Boston: PWS Pub. Co., 1996.

P. Haaf and J. Harper, “Understanding Diode Reverse Recovery and its Effect on Switching Losses,” Fairchild Power Seminar 2007, 2007.

D. A. Grant and J. Gowar, Power MOSFETS: theory and applications. New York: Wiley, 1989.

B. Carsten and B. Mammano, “Understanding and Optimizing Electromagnetic Compatibility in Switchmode Power Supplies,” Texas Instruments, 2003.


  • There are currently no refbacks.

Copyright (c) 2017 Informacije MIDEM