CMOS series-shunt single-pole double-throw transmit/receive switch and low noise amplifier design for internet of things based radio frequency identification devices

Mohammad Arif Sobhan Bhuiyan


The incompatibility between current RFID standards has led to the need for universal and Wi-Fi compatible RFID for IoT applications. Such a universal RFID requires an SPDT and an LNA to direct and amplify the received raw signal by the antenna. The SPDT suffers from low isolation, high insertion loss and low power handling capacity whereas the LNA suffers from bulky die area, lesser Q factor, limited tuning flexibility etc. because of passive inductor usage in current generation of devices. In this research, nano-CMOS inductorless SPDT and LNA designs are proposed. The SPDT adopts a series-shunt topology along with parallel resonant circuits and resistive body floating in order to achieve improved insertion loss and isolation performance whereas the LNA design is implemented with the gyrator concept in which the frequency selective tank circuit is formed with an active inductor accompanied by the buffer circuits. The post-layout simulation results, utilizing 90nm CMOS process of cadence virtuoso, exhibit that our SPDT design accomplishes 0.83dB insertion loss, a 45.3dB isolation, and a 11.3dBm power-handling capacity whereas the LNA achieves a peak gain of 33dB, bandwidth of 30MHz and NF of 6.6dB at 2.45GHz center frequency. Both the SPDT and LNA have very compact layout which are 0.003mm2 and 127.7 μm2, respectively. Such SPDT and LNA design will boost the widespread adaptation of Wi-Fi-compatible IoT RFID technology.


active inductor; CMOS; IoT; LNA; RFID; SPDT

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