Optimization of shunt capacitive RF MEMS switch by using NSGA-II algorithm and uti-liti algorithm

Alireza Ardehshiri, Gholamreza Karimi, Ramin Dehdasht-Heydari


The present paper aimed to design, optimize, and simulate the RF MEMS Switch which is stimulated electrostatically. The design of the switch is located on the Coplanar Waveguide (CPW) transmission line. The pull-in voltage of the switch was 2V and the axial residual stress of the proposed design was obtained 23MPa. In order to design and optimize the geometric structure of the switch, the desired model was extracted based on the objective function of the objective functions of the actuation voltage and insertion loss upstate and isolation down state by using the mathematical programming and solved by the NSGA-II meta-heuristic algorithm in MATLAB software. In addition, the design requirements and the appropriate levels for designing the switch were obtained by presenting the Pareto front from the beam actuation voltage and insertion loss upstate and isolation downstate. Finally, the RF parameters of the switch were calculated S11=-1.796 dB and S21=-34.17 dB at the working frequency of 40 GHz, by extracting the appropriate parameters of the switch design through simulating a switch designed with the COMSOL Multiphysics software 4.4a and advanced design system (ADS).


RF switch MEMS; Genetic algorithm; uti-liti; algorithm; Actuation voltage.

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DOI: https://doi.org/10.33180/InfMIDEM2019.106


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