Lyu, Weifeng, Hangzhou Dianzi University, China
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Vol 50, No 1 (2020) - Electronics
Analog / RF Performance Analysis of Nanometer Negative Capacitance FDSOI Transistors
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Vol 50, No 3 (2020) - Electronics
Superior Performance of a Negative-capacitance Double-gate Junctionless Field-effect Transistor with Additional Source-drain Doping
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Vol 51, No 4 (2021) - Electronics
Reduction of Random Dopant Fluctuation-induced Variation in Junctionless FinFETs via Negative Capacitance Effect
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Vol 54, No 1 (2024) - Electronics
Analysis and mitigation of negative differential re-sistance effects with hetero-gate dielectric layer in negative-capacitance field-effect transistors
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ISSN: 2232-6979